A paper about MD simulation of a-Si:H/c-Si has been published.
Molecular dynamics simulations using machine learning potential for a-Si:H/c-Si interface: Effects of oxygen and hydrogen on interfacial defect states
Takayuki Semba, Jacob McKibbin, Ryosuke Jinnouchi, Ryoji Asahi
Journal of Materials Research 38, 5151-5160 (2023)